050-7626 rev a 12-2007 apt100gn120b2 typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci? ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 4ma) gate threshold voltage (v ce = v ge , i c = 4ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 100a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 100a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) integrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r g(int) units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt100gn120b2 1200 30 245100 300 300a @ 1200v 960 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c 8 continuous collector current @ t c = 110c 8 pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. utilizing the latest field stop and trench gate technologies, these igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef? cient. a built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. low gate charge simpli? es gate drive design and minimizes losses. ? 1200v field stop ? trench gate: low v ce(on) ? easy paralleling ? integrated gate resistor: low emi, high reliability applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 1200 5.0 5.8 6.5 1.4 1.7 2.1 2.0 100 tbd 600 7.5 g c e 1200v apt100gn120b2 APT100GN120B2G* *g denotes rohs compliant, pb free terminal finish. ? t-max g c e ? downloaded from: http:///
050-7626 rev a 12-2007 apt100gn120b2 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r g(int) nor gate driver impedance. (mic4452) 8 continuous current limited by package lead temperature. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 100a t j = 150c, r g = 4.3 7 , v ge = 15v, l = 100h,v ce = 1200v inductive switching (25c) v cc = 800v v ge = 15v i c = 100a r g = 1.0 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 100a r g = 1.0 7 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 6500 365 280 9.5 540 50 295 300 50 50 615 105 11 15 9.5 50 50 725 210 12 22 14 unit pf v nc a ns m j ns m j thermal and mechanical characteristics unit c/w gm min typ max .13 n/a 6.1 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t downloaded from: http:///
050-7626 rev a 12-2007 apt100gn120b2 typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 300250 200 150 100 50 0 300250 200 150 100 50 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 1.151.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 1.0 2.0 3.0 4.0 5.0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 0 100 200 300 400 500 600 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 300250 200 150 100 50 0 1614 12 10 86 4 2 0 3.5 3 2.5 2 1.5 1 0.5 0 350300 250 200 150 100 50 0 v ce , collector-to-emitter voltage (v) v ce , collector-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature 15v 9v 8v 7v 11v t j = 125c t j = 25c t j = -55c v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 175c v ge = 15v 10v v ce = 600v v ce = 240v i c = 100a t j = 25c v ce = 960v t j = 25c. 250s pulse test <0.5 % duty cycle i c = 200a i c = 100a i c = 50a i c = 200a i c = 100a i c = 50a 12v 13v t j = 150c lead temperature limited downloaded from: http:///
050-7626 rev a 12-2007 apt100gn120b2 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 1.0 l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 800v t j = 25c , or 125c r g = 1.0 l = 100h 6050 40 30 20 10 0 250200 150 100 50 0 80,00060,000 40,000 20,000 0 100,000 80,00060,000 40,000 20,000 0 1000 800600 400 200 0 250200 150 100 50 0 30,00025,000 20,000 15,000 10,000 5000 0 80,00060,000 40,000 20,000 0 v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v v ce = 800v v ge = +15v r g = 1.0 10 40 70 100 130 160 190 220 10 40 70 100 130 160 190 220 10 40 70 100 130 160 190 220 10 40 70 100 130 160 190 220 10 40 70 100 130 160 190 220 10 40 70 100 130 160 190 220 0 5 10 15 20 0 25 50 75 100 125 r g = 1.0 , l = 100 h, v ce = 800v r g = 1.0 , l = 100 h, v ce = 800v t j = 25 or 125c,v ge = 15v v ce = 800v v ge = +15v r g = 1.0 t j = 125c t j = 25c v ce = 800v v ge = +15v r g = 1.0 t j = 125c t j = 25c e on2, 200a e off, 200a e on2, 100a e off, 100a e on2, 50a e off, 50a v ce = 800v v ge = +15v t j = 125c e on2, 200a e off, 200a e on2, 100a e off, 100a e on2, 50a e off, 50a downloaded from: http:///
050-7626 rev a 12-2007 apt100gn120b2 typical performance curves 0.140.12 0.10 0.08 0.06 0.04 0.02 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10,000 5,0001,000 500100 350300 250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 figure 19b, transient thermal impedance model 20 40 60 80 100 120 140 160 180 200 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 800v r g = 1.0 5040 30 20 10 0 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: c res c oes c ies 0.0273 0.0558 0.0467 0.00088 0.0233 0.649 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext downloaded from: http:///
050-7626 rev a 12-2007 apt100gn120b2 i c a d.u.t. v ce figure 21, inductive switching test circuit v cc figure 22, turn-on switching waveforms and de? nitions figure 23, turn-off switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt100dq120 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector emitter gate collector e1 sac: tin, silver, copper t-max ? (b2) package outline microsemi?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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